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this is information on a product in full production. february 2014 docid025992 rev 1 1/28 oa1mpa, oa2mpa, oa4mpa high precision low-power cmos op amp datasheet - production data features ? low offset voltage: 200 v max. ? low power consumption: 10 a at 5 v ? low supply voltage: 1.5 v to 5.5 v ? gain bandwidth product: 150 khz typ. ? low input bias current: 1 pa typ. ? rail-to-rail input and output ? emi hardened operational amplifiers ? high tolerance to esd: 4 kv hbm ? extended temperature range: -40 to +125 c benefits ? high precision without calibration ? energy saving ? guaranteed operation on low-voltage battery applications ? wearable ? fitness and healthcare ? medical instrumentation description the oa1mpa, oa2mpa, oa4mpa series of single, dual, and quad operational amplifiers offer low-voltage operation, ra il-to-rail input and output, and excellent precision (v io lower than 200 v at 25 c). these low power op amps benefit from stmicroelectronics 5 v cmos technology and offer an excellent speed/power consumption ratio (150 khz typical gain bandwidth) while consuming less than 14 a at 5 v. the oa1mpa, oa2mpa, oa4mpa series also feature an ultra-low input bias current. the oa1mpa, oa2mpa, oa4mpa are respectively the single, dual and quad operational amplifier versions and are housed in the smallest industrial package. the oa1mpa, oa2mpa, oa4mpa family is the ideal choice for wearable, fitness and healthcare applications. single (oa1mpa) sc70-5 dfn8 2x2 miniso-8 dual (oa2mpa) quad (oa4mpa) qfn16 3x3 table 1. device summary order code temperature range package packaging marking OA1MPA22C -40 c to +125 c sc70-5 tape and reel k1w oa2mpa22q dfn8 2x2 k1w oa2mpa34s miniso8 v712 oa4mpa33q qfn16 3x3 k1w www.st.com
contents oa1mpa, oa2mpa, oa4mpa 2/28 docid025992 rev 1 contents 1 pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 absolute maximum ratings and operating c onditions . . . . . . . . . . . . . 4 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.1 operating voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2 rail-to-rail input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.3 rail-to-rail output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 input offset voltage drift over temperature . . . . . . . . . . . . . . . . . . . . . . . . 16 4.5 long-term input offset voltage drift . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.6 initialization time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.7 pcb layouts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.8 macromodel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5.1 sc70-5 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.2 dfn8 2x2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.3 miniso-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.4 qfn16 3x3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
docid025992 rev 1 3/28 oa1mpa, oa2mpa, oa4mpa pin connections 28 1 pin connections figure 1. pin connections (top view) 1. the exposed pads of the qfn16 3x3 c an be connected to vcc- or left floating. 9&& 9&& 287 ,1 ,1 287 ,1 ,1 9&& 9&& 287 ,1 ,1 287 ,1 ,1 9&& ,1 287 9&& ,1 ,1 9&& 1& ,1 ,1 9&& 1& ,1 ,1 287 287 ,1 ,1 287 287 ,1 1& dfn8 2x2 (oa2mpa) miniso-8 (oa2mpa) dual qfn16 3x3 (oa4mpa) sc70-5 (oa1mpa) quad single
absolute maximum ratings and operat ing conditions oa1mpa, oa2mpa, oa4mpa 4/28 docid025992 rev 1 2 absolute maximum ratings and operating conditions table 2. absolute maximum ratings (amr) symbol parameter value unit v cc supply voltage (1) 1. all voltage values, except the differential voltage are with respect to the network ground terminal. 6 v v id differential input voltage (2) 2. the differential voltage is a non-inverting input terminal with respect to the inverting input terminal. the oa2mpa and oa4mpa devices include an internal diff erential voltage limiter that clamps internal differential voltage at 0.5 v. v cc v in input voltage (3) 3. v cc - v in must not exceed 6 v, v in must not exceed 6 v. v cc- - 0.2 to v cc+ + 0.2 i in input current (4) 4. input current must be limited by a resistor in series with the inputs. 10 ma t stg storage temperature -65 to +150 c r thja thermal resistance junction-to-ambient (5)(6) sc70-5 dfn8 2x2 miniso8 qfn16 3x3 5. short-circuits can cause excess ive heating and destructive dissipation. 6. r th are typical values. 205 120 190 45 c/w r thjc thermal resistance junction-to-case dfn8 2x2 33 t j maximum junction temperature 150 c esd hbm: human body model (7) 7. human body model: 100 pf discharged through a 1.5 k ?? resistor between two pins of the device, done for all couples of pin combinations with other pins floating. 4kv mm: machine model for oa1mpa (8) 8. machine model: a 200 pf cap is charged to the s pecified voltage, then discharged directly between two pins of the device with no external se ries resistor (internal resistor < 5 ? ), done for all couples of pin combinations with other pins floating. 150 v mm: machine model for oa2mpa (8) 200 mm: machine model for oa4mpa (8) 300 cdm: charged device model except miniso8 (9) 9. charged device model: al l pins plus package are charged together to the specified voltage and then discharged directly to ground. 1.5 kv cdm: charged device model for miniso8 (9) 1.3 latch-up immunity 200 ma
docid025992 rev 1 5/28 oa1mpa, oa2mpa, oa4mpa absolute maxi mum ratings and operating conditions 28 table 3. operating conditions symbol parameter value unit v cc supply voltage 1.5 to 5.5 v v icm common mode input voltage range v cc- - 0.1 to v cc+ + 0.1 t oper operating free air temperature range -40 to +125 c
electrical characteristics oa1mpa, oa2mpa, oa4mpa 6/28 docid025992 rev 1 3 electrical characteristics v cc+ = 1.8 v with v cc- = 0 v, v icm = v cc /2, t = 25 c, and r l = 10 k ? connected to v cc /2 (unless otherwise specified) table 4. electrical characteristics symbol parameter conditions min. typ. max. unit dc performance v io input offset voltage (v icm = 0 v) t = 25 c 200 ? v -40 c < t< 85 c 850 -40 c < t< 125 c 1200 ? v io / ? t input offset voltage drift -40 c < t< 125 c (1) 10 ? v/c i io input offset current (v out = v cc /2) t = 25 c 1 10 (2) pa -40 c < t< 125 c 1 300 (2) i ib input bias current (v out = v cc /2) t = 25 c 1 10 (2) -40 c < t< 125 c 1 300 (2) cmr common mode rejection ratio 20 log ( ? v icm / ? v io ) v icm = 0 v to v cc , v out = v cc /2, r l > 1 m ? t = 25 c 69 88 db -40 c < t< 125 c 61 a vd large signal voltage gain v out = 0.5 v to (v cc - 0.5 v) t = 25 c 95 -40 c < t< 125 c 85 v oh high level output voltage (v oh = v cc - v out ) t = 25 c 75 mv -40 c < t< 125 c 80 v ol low level output voltage t = 25 c 40 -40 c < t< 125 c 60 i out i sink ( v out = v cc) t = 25 c 6 12 ma -40 c < t< 125 c 4 i source ( v out = 0 v) t = 25 c 5 7 -40 c < t< 125 c 3 i cc supply current (per channel, v out = v cc /2, r l > 1 m ? t = 25 c 9 14 a -40 c < t< 125 c 16 ac performance gbp gain bandwidth product r l =10k ? , c l =100pf 100 120 khz f u unity gain frequency 100 f m phase margin 45 degrees g m gain margin 19 db
docid025992 rev 1 7/28 oa1mpa, oa2mpa, oa4mpa electrical characteristics 28 sr slew rate (3) r l =10k ? , c l = 100 pf, v out = 0.5 v to v cc - 0.5 v 0.04 v/ ? s e n equivalent input noise voltage f=1khz 100 f=10khz 96 t init initialization time (4) t = 25 c 5 ms -40 c < t< 125 c 60 1. see section 4.4: input offset voltage drift over temperature . 2. guaranteed by characterization. 3. slew rate value is calculated as the av erage between positive and negative slew rates. 4. initialization time is defined as the delay after power-up to guarantee operation within specified performances. guaranteed by design. see section 4.6: initialization time . table 4. electrical ch aracteristics (continued) symbol parameter conditions min. typ. max. unit nv hz ----------- -
electrical characteristics oa1mpa, oa2mpa, oa4mpa 8/28 docid025992 rev 1 v cc+ = 3.3 v with v cc- = 0 v, v icm = v cc /2, t = 25 c, and r l = 10 k ? connected to v cc /2 (unless otherwise specified) table 5. electrical characteristics symbol parameter conditions min. typ. max. unit dc performance v io input offset voltage t = 25 c 200 ? v -40 c < t< 85 c 850 -40 c < t< 125 c 1200 ? v io / ? t input offset voltage drift -40 c < t< 125 c (1) 10 ? v/c ? v io long-term input offset voltage drift t = 25 c (2) 0.3 i io input offset current (v out =v cc /2) t = 25 c 1 10 (3) pa -40 c < t< 125 c 1 300 (3) i ib input bias current (v out =v cc /2) t = 25 c 1 10 (3) -40 c < t< 125 c 1 300 (3) cmr common mode rejection ratio 20 log ( ? v icm / ? v io ) v icm = 0v to v cc , v out =v cc /2, r l > 1m ? t = 25 c 80 100 db -40 c < t< 125 c 69 a vd large signal voltage gain v out = 0.5 v to (v cc - 0.5 v) t = 25 c 95 -40 c < t< 125 c 85 v oh high level output voltage (v oh = v cc -v out ) t = 25 c 75 mv -40 c < t< 125 c 80 v ol low level output voltage t = 25 c 40 -40 c < t< 125 c 60 i out i sink ( v out = v cc) t = 25 c 20 34 ma -40 c < t< 125 c 15 i source ( v out = 0 v) t = 25 c 20 26 -40 c < t< 125 c 15 i cc supply current (per channel, v out = v cc /2, r l > 1m ? ) t = 25 c 9 14 a -40 c < t< 125 c 16 ac performance gbp gain bandwidth product r l =10k ? , c l =100pf 100 120 khz f u unity gain frequency 100 f m phase margin 45 degrees g m gain margin 19 db sr slew rate (4) r l =10k ? , c l = 100 pf, v out = 0.5 v to v cc - 0.5 v 0.05 v/ ? s ? v month ---------------------------
docid025992 rev 1 9/28 oa1mpa, oa2mpa, oa4mpa electrical characteristics 28 e n equivalent input noise voltage f=1khz 100 f=10khz 96 t init initialization time (5) t = 25 c 5 ms -40 c < t< 125 c 50 1. see section 4.4: input offset voltage drift over temperature . 2. typical value is based on the v io drift observed after 1000h at 125 c extrapolated to 25 c using the arrhenius law and assuming an activation energy of 0.7 ev. the operational am plifier is aged in follower mode configuration. see section 4.5: long-term input offset voltage drift . 3. guaranteed by characterization. 4. slew rate value is calculated as the av erage between positive and negative slew rates. 5. initialization time is defined as the delay after power -up which guarantees operation wi thin specified performances. guaranteed by design. see section 4.6: initialization time . table 5. electrical ch aracteristics (continued) symbol parameter conditions min. typ. max. unit nv hz ----------- -
electrical characteristics oa1mpa, oa2mpa, oa4mpa 10/28 docid025992 rev 1 v cc+ = 5 v with v cc- = 0 v, v icm = v cc /2, t = 25 c, and r l = 10 k ? connected to v cc /2 (unless otherwise specified) table 6. electrical characteristics symbol parameter conditions min. typ. max. unit dc performance v io input offset voltage t = 25 c 200 ? v -40 c < t< 85 c 850 -40 c < t< 125 c 1200 ? v io / ? t input offset voltage drift -40 c < t< 125 c (1) 10 ? v/c ? v io long-term input offset voltage drift t = 25 c (2) 0.7 i io input offset current (v out = v cc /2) t = 25 c 1 10 (3) pa -40 c < t< 125 c 1 300 (3) i ib input bias current (v out = v cc /2) t = 25 c 1 10 (3) -40 c < t< 125 c 1 300 (3) cmr common mode rejection ratio 20 log ( ? v icm / ? v io ) v icm = 0 v to v cc , v out = v cc /2, r l > 1 m ? t = 25 c 74 94 db -40 c < t< 125 c 73 svr supply voltage rejection ratio 20 log ( ? v cc / ? v io ) v cc = 1.5 to 5.5 v, v ic = 0 v, r l > 1 m ? t = 25 c 71 90 -40 c < t< 125 c 71 a vd large signal voltage gain v out = 0.5 v to (v cc - 0.5 v) t = 25 c 95 -40 c < t< 125 c 85 emirr emi rejection ratio emirr = 20 log (v rfpeak / ? v io) v rf = 100 mvrfpeak, f = 400 mhz 38 (4) v rf = 100 mvrfpeak, f = 900 mhz 50 (4) v rf = 100 mvrfpeak, f = 1800 mhz 60 (4) v rf = 100 mvrfpeak, f = 2400 mhz 63 (4) v oh high level output voltage (v oh = v cc - v out ) t = 25 c 75 mv -40 c < t< 125 c 80 v ol low level output voltage t = 25 c 40 -40 c < t< 125 c 60 i out i sink (v out = v cc ) t = 25 c 35 56 ma -40 c < t< 125 c 20 i source ( v out = 0 v) t = 25 c 35 45 -40 c < t< 125 c 20 ? v month ---------------------------
docid025992 rev 1 11/28 oa1mpa, oa2mpa, oa4mpa electrical characteristics 28 i cc supply current (per channel, v out = v cc /2, r l > 1 m ? ) t = 25 c 10 14 a -40 c < t< 125 c 16 ac performance gbp gain bandwidth product r l =10k ? , c l = 100 pf 110 150 khz f u unity gain frequency 120 f m phase margin 45 degrees g m gain margin 19 db sr slew rate (5) r l =10k ? , c l = 100 pf, v out = 0.5 v to v cc - 0.5 v 0.06 v/ ? s ? e n low-frequency peak-to-peak input noise bandwidth: f=0.1to10hz 10 v pp e n equivalent input noise voltage f=1khz 100 f = 10 khz 96 thd+n total harmonic distortion + noise f in = 1 khz, a cl =1, r l = 100 k ? , v icm =(v cc - 1 v)/2, bw = 22 khz, v out =0.5v pp 0.008 % t init initialization time (6) t = 25 c 5 ms -40 c < t< 125 c 50 1. see section 4.4: input offset voltage drift over temperature . 2. typical value is based on the v io drift observed after 1000h at 125 c extrapolated to 25 c using the arrhenius law and assuming an activation energy of 0.7 ev. the operational amplifier is aged in follower mode configuration. see section 4.5: long-term input offset voltage drift . 3. guaranteed by characterization. 4. tested on sc70-5 package. 5. slew rate value is calculated as the average between positive and negative slew rates. 6. initialization time is defined as the del ay after power-up to guarantee operation within specified performances. guaranteed by design. see section 4.6: initialization time . table 6. electrical ch aracteristics (continued) symbol parameter conditions min. typ. max. unit nv hz ----------- -
electrical characteristics oa1mpa, oa2mpa, oa4mpa 12/28 docid025992 rev 1 figure 2. supply current vs. supply voltage at v icm = v cc /2 figure 3. input offset voltage distribution at v cc =5v, v icm = v cc /2 figure 4. input offset voltage distribution at v cc = 3.3 v, v icm = v cc /2 figure 5. input offset voltage temperature coefficient distribution -250 -200 -150 -100 -50 0 50 100 150 200 250 0 5 10 15 20 25 30 v cc = 3.3 v v icm = 1.65 v t = 25 ?c population (%) input offset voltage (?) figure 6. input offset voltage vs. input common mode voltage figure 7. input offset voltage vs. temperature
docid025992 rev 1 13/28 oa1mpa, oa2mpa, oa4mpa electrical characteristics 28 figure 8. output current vs. output voltage at v cc =1.5v figure 9. output current vs. output voltage at v cc =5v figure 10. output current vs. supply voltage figure 11. bode diagram at v cc =1.5v figure 12. bode diagram at v cc = 5 v figure 13. closed-loop gain diagram vs. capacitive load
electrical characteristics oa1mpa, oa2mpa, oa4mpa 14/28 docid025992 rev 1 figure 14. positive slew rate figure 15. negative slew rate figure 16. slew rate vs. supply voltage figure 17. noise vs. frequency figure 18. 0.1 hz to 10 hz noise figure 19. thd+n vs. frequency
docid025992 rev 1 15/28 oa1mpa, oa2mpa, oa4mpa electrical characteristics 28 figure 20. thd+n vs. output voltage figure 21. output impedance vs. frequency in closed-loop configuration
application information oa1mpa, oa2mpa, oa4mpa 16/28 docid025992 rev 1 4 application information 4.1 operating voltages the oa1mpa, oa2mpa, and oa4mpa series of devices can operate from 1.5 v to 5.5 v. the parameters are fully specified for 1.8 v, 3.3 v, and 5 v power supplies. however, they are very stable in the full v cc range and several characterization curves show oa1mpa, oa2mpa, and oa4mpa device characteristics at 1.5 v. in addition, the main specifications are guaranteed in the extended temperature range from -40 c to +125 c. 4.2 rail-to-rail input the oa1mpa, oa2mpa, and oa4mpa devices have a rail-to-rail input, and the input common mode range is extended from v cc- - 0.1 v to v cc+ + 0.1 v. 4.3 rail-to-rail output the output levels of the oa1mpa, oa2mpa, and oa4mpa operational amplifiers can go close to the rails: to a maximum of 40 mv be low the upper rail and to a maximum of 75 mv above the lower rail when a 10 k ? resistive load is connected to v cc /2. 4.4 input offset voltage drift over temperature the maximum input voltage drift over the temperature variation is defined as the offset variation related to offset value measured at 25 c. the operational amplifier is one of the main circuits of the signal conditioning chai n, and the amplifier input offset is a major contributor to the chain accuracy. the signal chain accuracy at 25 c can be compensated during production at application level. the ma ximum input voltage drift over temperature enables the system designer to anticipate the effect of temperature variations. the maximum input voltage drift over temperature is computed using equation 1 . equation 1 with t = -40 c and 125 c. the datasheet maximum value is guaranteed by a measurement on a representative sample size ensuring a c pk (process capability in dex) greate r than 1.33. ? v io ? t ----------- - max v io t ?? v io 25 ? c ?? ? t25 ? c ? -------------------------------------------------- =
docid025992 rev 1 17/28 oa1mpa, oa2mpa, oa4mpa application information 28 4.5 long-term input of fset voltage drift to evaluate product reliability, two ty pes of stress acceleration are used: ? voltage acceleration, by changing the applied voltage ? temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. the voltage acceleration has been defined bas ed on jedec results, and is defined using equation 2 . equation 2 where: a fv is the voltage acceleration factor ? is the voltage acceleration constant in 1/v, constant technology parameter ( ? = 1) v s is the stress voltage used for the accelerated test v u is the voltage used for the application the temperature acceleration is driven by the arrhenius model, and is defined in equation 3 . equation 3 where: a ft is the temperature acceleration factor e a is the activation energy of the technology based on the failure rate k is the boltzmann constant (8.6173 x 10 -5 ev.k -1 ) t u is the temperature of the die when v u is used (k) t s is the temperature of the die under temperature stress (k) the final acceleration factor, a f , is the multiplication of the voltage acceleration factor and the temperature acceleration factor ( equation 4 ). equation 4 a f is calculated using the temperature and volt age defined in the mission profile of the product. the a f value can then be used in equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. a fv e ? v s v u ? ?? ? = a ft e e a k ------ 1 t u ------ 1 t s ------ ? ?? ?? ? = a f a ft a fv ? =
application information oa1mpa, oa2mpa, oa4mpa 18/28 docid025992 rev 1 equation 5 to evaluate the op amp reliability, a fo llower stress condition is used where v cc is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by jedec rules). the v io drift (in v) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see equation 6 ). equation 6 the long term drift parameter ( ? v io ), estimating the reliability pe rformance of th e product, is obtained using the ratio of the v io (input offset voltage value) dr ift over the square root of the calculated number of months ( equation 7 ). equation 7 where v io drift is the measured drift value in the specified test conditions after 1000 h stress duration. months a f 1000 h ? 12 months 24 h 365.25 days ? ?? ? ? = v cc maxv op with v icm v cc 2 ? == ? v io v io drift months ?? ------------------------------ =
docid025992 rev 1 19/28 oa1mpa, oa2mpa, oa4mpa application information 28 4.6 initialization time the oa1mpa, oa2mpa, and oa4mpa series of devices use a proprietary trimming topology that is initia ted at each device power-up and allows excellent v io performance to be achieved. the initialization time is defined as the delay after power-up which guarantees operation within specified performances. duri ng this period, the current consumption ( i cc ) and the input offset voltage ( v io ) can be different to the typical ones. figure 22. initialization phase the initialization time is v cc and temperature dependent. table 7 sums up the measurement results for different supply voltages and for temperatures varying from -40 c to 125 c. 4.7 pcb layouts for correct operation, it is advised to add a 10 nf decoupling capacitors as close as possible to the power supply pins. table 7. initialization time measurement results v cc (v) temperature: -40 c temperature: 25 c temperature: 125 c t init (ms) i cc phase 1 (ma) t init (ms) i cc phase 1 (ma) t init (ms) i cc phase 1 (ma) 1.8 37 0.33 3.2 0.40 0.35 0.46 3.3 2.9 1.4 0.95 1.3 0.34 1.2 5 2.4 3.2 0.85 2.4 0.31 2.9
application information oa1mpa, oa2mpa, oa4mpa 20/28 docid025992 rev 1 4.8 macromodel accurate macromodels of the oa1mpa, oa2mpa, and oa4mpa devices are available on the stmicroelectronics? website at www.st.com . these model are a trade-off between accuracy and complexity (that is, time simu lation) of the oa1mpa, oa2mpa, and oa4mpa op amp. they emulate the nominal performanc e of a typical device within the specified operating conditions mentioned in the datash eet. they also help to validate a design approach and to select the right op amp, but they do not replace on-board measurements .
docid025992 rev 1 21/28 oa1mpa, oa2mpa, oa4m pa package information 28 5 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark.
package information oa1mpa, oa2mpa, oa4mpa 22/28 docid025992 rev 1 5.1 sc70-5 package information figure 23. sc70-5 package mechanical drawing table 8. sc70-5 package mechanical data symbol dimensions millimeters inches min. typ. max. min. typ. max. a 0.80 1.10 0.032 0.043 a1 0 0.10 0.004 a2 0.80 0.90 1.00 0.032 0.035 0.039 b 0.15 0.30 0.006 0.012 c 0.10 0.22 0.004 0.009 d 1.80 2.00 2.20 0.071 0.079 0.087 e 1.80 2.10 2.40 0.071 0.083 0.094 e1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 0.025 e1 1.30 0.051 l 0.26 0.36 0.46 0.010 0.014 0.018 <0 80 8 seating plane gauge plane dimensions in mm side view top view coplanar leads
docid025992 rev 1 23/28 oa1mpa, oa2mpa, oa4m pa package information 28 5.2 dfn8 2x2 pack age information figure 24. dfn8 2x2 package mechanical drawing table 9. dfn8 2x2 package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.70 0.75 0.80 0.028 0.030 0.031 a1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 d 2.00 0.079 e 2.00 0.079 e 0.50 0.020 l 0.045 0.55 0.65 0.018 0.022 0.026 n8 8 h / %277209,(: 3lq,' 3,1,1'(;$5($ ( & $ $ 3/$1( 6($7,1* 7239,(: & & [ [ ' 3,1,1'(;$5($ esofv & & $ % % $ & 6,'(9,(: *$06&%
package information oa1mpa, oa2mpa, oa4mpa 24/28 docid025992 rev 1 5.3 miniso-8 package information figure 25. miniso-8 pack age mechanical drawing table 10. miniso-8 package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.1 0.043 a1 0 0.15 0 0.006 a2 0.75 0.85 0.95 0.030 0.033 0.037 b 0.22 0.40 0.009 0.016 c 0.08 0.23 0.003 0.009 d 2.80 3.00 3.20 0.11 0.118 0.126 e 4.65 4.90 5.15 0.183 0.193 0.203 e1 2.80 3.00 3.10 0.11 0.118 0.122 e 0.65 0.026 l 0.40 0.60 0.80 0.016 0.024 0.031 l1 0.95 0.037 l2 0.25 0.010 k 0 8 0 8 ccc 0.10 0.004
docid025992 rev 1 25/28 oa1mpa, oa2mpa, oa4m pa package information 28 5.4 qfn16 3x3 package information figure 26. qfn16 3x3 package mechanical drawing 4)1b[b9bb&
package information oa1mpa, oa2mpa, oa4mpa 26/28 docid025992 rev 1 figure 27. qfn16 3x3 footprint recommendation table 11. qfn16 3x3 mm package mechanical data (pitch 0.5 mm) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.80 0.90 1.00 0.031 0.035 0.039 a1 0 0.05 0 0.002 a3 0.20 0.008 b 0.18 0.30 0.007 0.012 d 2.90 3.00 3.10 0.114 0.118 0.122 d2 1.50 1.80 0.059 0.071 e 2.90 3.00 3.10 0.114 0.118 0.122 e2 1.50 1.80 0.059 0.071 e 0.50 0.020 l 0.30 0.50 0.012 0.020 4)1b[b9birrwsulqwbb&
docid025992 rev 1 27/28 oa1mpa, oa2mpa, oa4mpa revision history 28 6 revision history table 12. document revision history date revision changes 28-feb-2014 1 initial release
oa1mpa, oa2mpa, oa4mpa 28/28 docid025992 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems wi th product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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